Method and system for temperature control of a substrate

ABSTRACT

A substrate holder for supporting a substrate in a processing system and controlling the temperature thereof is described. The substrate holder comprises a first heating element positioned in a first region for elevating the temperature of the first region. A second heating element positioned in a second region is configured to elevate the temperature in the second region. Furthermore, a first controllably insulating element is positioned below the first heating element, and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the first region. A second controllably insulating element is positioned below the second heating element and is configured to control the transfer of heat between the substrate and at least one cooling element positioned therebelow in the second region.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims priority to and is related to U.S. ProvisionalApplication Ser. No. 60/458,043, filed on Mar. 28, 2003, which isrelated to pending U.S. patent application Ser. No. 10/168,544, filedJul. 2, 2002. The entire contents of each of these applications areincorporated herein by reference.

FIELD OF THE INVENTION

The present invention relates to a method and system for temperaturecontrol of a substrate, and more particularly to a substrate holder fortemperature control of a substrate.

BACKGROUND OF THE INVENTION

Throughout the various stages of substrate processing, such assemiconductor or display manufacturing, etc., critical processparameters may vary significantly. Processing conditions and theirspatial distributions change over time with the slightest changes incritical process parameters creating undesirable results. Small changescan easily occur in the composition or pressure of a process gas, orsubstrate temperature, and the spatial distributions thereof. As such,substrate processing components require constant monitoring, and theability to tightly control these processing conditions and their spatialdistributions.

SUMMARY OF THE INVENTION

A method and system for temperature control of a substrate is described.The system for temperature control of the substrate comprises asubstrate holder for supporting the substrate in a processing system andcontrolling the temperature thereof. The substrate holder comprises afirst heating element arranged in a first region of the substrate holderand configured to raise the temperature in the first region; a secondheating element configured to raise the temperature in the peripheralregion; a first controllably insulating element positioned below thefirst heating element in the first region; a second controllablyinsulating element positioned below the second heating element in thesecond region; and at least one cooling element arranged below the firstand second controllably insulating elements, wherein the firstcontrollably insulating element is configured to control the transfer ofheat from the substrate through the first region of the substrate holderto the at least one cooling element, and the second controllablyinsulating element is configured to control the transfer of heat betweenthe substrate through the second region of the substrate holder to theat least one cooling element.

In one embodiment of such a system, the first region is a centralregion, and the second region is a peripheral region arrangedconcentrically about the first region.

The method comprising: initializing one or more control parameters forcontrolling the temperature of the substrate using the substrate holder,the one or more control parameters for controlling the temperature ofthe substrate using the substrate holder; initiating a process in theprocessing system; adjusting the one or more control parameters; andterminating the process.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other advantages of the invention will become more apparentand more readily appreciated from the following detailed description ofthe exemplary embodiments of the invention taken in conjunction with theaccompanying drawings, where:

FIG. 1 shows a material processing system according to an embodiment ofthe present invention;

FIG. 2 shows a material processing system according to anotherembodiment of the present invention;

FIG. 3 shows a material processing system according to anotherembodiment of the present invention;

FIG. 4 shows a material processing system according to a furtherembodiment of the present invention;

FIG. 5 shows a material processing system according to an additionalembodiment of the present invention;

FIG. 6 presents a substrate holder according to an embodiment of thepresent invention;

FIG. 7 presents a substrate holder according to another embodiment ofthe present invention;

FIG. 8 presents a substrate holder according to another embodiment ofthe present invention;

FIG. 9 presents a substrate holder according to another embodiment ofthe present invention;

FIG. 10 presents a substrate holder according to another embodiment ofthe present invention; and

FIG. 11 presents a method of controlling the temperature of a substrateon a substrate holder in a processing system according to an embodimentof the present invention.

DETAILED DESCRIPTION OF AN EMBODIMENT

According to an embodiment of the present invention, a materialprocessing system 1 is depicted in FIG. 1 that includes a process tool10 having a substrate holder 20 and a substrate 25 supported thereon.The substrate holder 20 is configured to provide temperature controlelements for rapid adjustment of substrate temperature, wherein thetemperature elements are spatially arranged in order to ensure a uniformsubstrate temperature. A controller 55 is coupled to the process tool 10and the substrate holder 20, and is configured to monitor and controlthe substrate temperature.

In the illustrated embodiment depicted in FIG. 1, the materialprocessing system 1 can include an etch chamber. For example, the etchchamber can facilitate dry plasma etching, or, alternatively, drynon-plasma etching. Alternately, the material processing system 1includes a photoresist coating chamber such as a heating/cooling modulein a photoresist spin coating system that may be utilized forpost-adhesion bake (PAB) or post-exposure bake (PEB), etc.; aphotoresist patterning chamber such as an ultraviolet (UV) lithographysystem; a dielectric coating chamber such as a spin-on-glass (SOG) orspin-on-dielectric (SOD) system; a deposition chamber such as a chemicalvapor deposition (CVD) system or a physical vapor deposition (PVD)system; or a rapid thermal processing (RTP) chamber such as a RTP systemfor thermal annealing.

According to the illustrated embodiment depicted in FIG. 2, the materialprocessing system 1 includes process tool 10, substrate holder 20, uponwhich a substrate 25 to be processed is affixed, gas injection system40, and vacuum pumping system 58. Substrate 25 can be, for example, asemiconductor substrate, a wafer, or a liquid crystal display (LCD).Process tool 10 can be, for example, configured to facilitate thegeneration of plasma in processing region 45 adjacent a surface ofsubstrate 25, where plasma is formed via collisions between heatedelectrons and an ionizable gas. An ionizable gas or mixture of gases isintroduced via gas injection system 40, and the process pressure isadjusted. Desirably, plasma is utilized to create materials specific toa predetermined materials process, and to aid either the deposition ofmaterial to substrate 25 or the removal of material from the exposedsurfaces of substrate 25. For example, controller 55 can be used tocontrol vacuum pumping system 58 and gas injection system 40.

As shown in FIG. 2, substrate holder 20 can include an electrode throughwhich RF power is coupled to plasma in processing region 45. Forexample, substrate holder 20 can be electrically biased at an RF voltagevia the transmission of RF power from RF generator 30 through impedancematch network 32 to substrate holder 20. The RF bias can serve to heatelectrons to form and maintain plasma. In this configuration, the systemcan operate as a reactive ion etch (RIE) reactor, where the chamber andupper gas injection electrode serve as ground surfaces. A typicalfrequency for the RF bias can range from 1 MHz to 100 MHz and ispreferably 13.56 MHz.

Alternately, RF power can be applied to the substrate holder electrodeat multiple frequencies. Furthermore, impedance match network 32 servesto maximize the transfer of RF power to plasma in processing chamber 10by minimizing the reflected power. Various match network topologies(e.g., L-type, π-type, T-type, etc.) and automatic control methods canbe utilized.

With continuing reference to FIG. 2, process gas can be, for example,introduced to processing region 45 through gas injection system 40.Process gas can, for example, include a mixture of gases such as Ar, Kr,Ne, He, CF₄, C₄F₈, C₄F₆, C₅F₈, O₂, H₂, N₂, Cl₂, SF₆, HBr, CO, HF, NH₃,etc. Gas injection system 40 includes a showerhead, where process gas issupplied from a gas delivery system (not shown) to the processing region45 through a gas injection plenum (not shown), a series of baffle plates(not shown) and a multi-orifice showerhead gas injection plate (notshown).

Vacuum pump system 58 can, for example, include a turbo-molecular vacuumpump (TMP) capable of a pumping speed up to 5000 liters per second (andgreater) and a gate valve for throttling the chamber pressure. Inconventional plasma processing devices utilized for dry plasma etch, a1000 to 3000 liter per second TMP is generally employed. TMPs are usefulfor low pressure processing, typically less than 50 mTorr. At higherpressures, the TMP pumping speed falls off dramatically. For highpressure processing (i.e., greater than 100 mTorr), a mechanical boosterpump and dry roughing pump can be used. Furthermore, a device formonitoring chamber pressure (not shown) is coupled to the processchamber 16. The pressure measuring device can be, for example, a Type628B Baratron absolute capacitance manometer commercially available fromMKS Instruments, Inc. (Andover, Mass.).

As shown in FIG. 3, material processing system 1 can include a magneticfield system 60. For example, the magnetic field system 60 can include astationary, or either a mechanically or electrically rotating DC or ACmagnetic field in order to potentially increase plasma density and/orimprove material processing uniformity. Moreover, controller 55 can becoupled to magnetic field system 60 in order to regulate the fieldstrength or speed of rotation.

As shown in FIG. 4, the material processing system can include an upperelectrode 70. For example, RF power can be coupled from RF generator 72through impedance match network 74 to upper electrode 70. A frequencyfor the application of RF power to the upper electrode preferably rangesfrom 10 MHz to 200 MHz and is preferably 60 MHz. Additionally, afrequency for the application of power to the lower electrode can rangefrom 0.1 MHz to 30 MHz and is preferably 2 MHz. Moreover, controller 55can be coupled to RF generator 72 and impedance match network 74 inorder to control the application of RF power to upper electrode 70.

As shown in FIG. 5, the material processing system of FIG. 1 can includean inductive coil 80. For example, RF power can be coupled from RFgenerator 82 through impedance match network 84 to inductive coil 80,and RF power can be inductively coupled from inductive coil 80 throughdielectric window (not shown) to plasma processing region 45. Afrequency for the application of RF power to the inductive coil 80preferably ranges from 10 MHz to 100 MHz and is preferably 13.56 MHz.Similarly, a frequency for the application of power to the chuckelectrode preferably ranges from 0.1 MHz to 30 MHz and is preferably13.56 MHz. In addition, a slotted Faraday shield (not shown) can beemployed to reduce capacitive coupling between the inductive coil 80 andplasma. Moreover, controller 55 can be coupled to RF generator 82 andimpedance match network 84 in order to control the application of powerto inductive coil 80. In an alternate embodiment, inductive coil 80 canbe a “spiral” coil or “pancake” coil in communication with the plasmaprocessing region 45 from above as in a transformer coupled plasma (TCP)reactor.

Alternately, the plasma can be formed using electron cyclotron resonance(ECR). In yet another embodiment, the plasma is formed from thelaunching of a Helicon wave. In yet another embodiment, the plasma isformed from a propagating surface wave.

In one embodiment, FIG. 6 presents a substrate holder 120 configured foruse in any one of the material processing systems 1 described in FIGS. 1through 5. Substrate holder 120 is configured to support substrate 125,and control the temperature thereof. Substrate holder 120 comprises afirst heating element 130 positioned in a central region 132 forelevating the temperature of the central region 132. A second heatingelement 140 positioned in a peripheral region 142 is concentricallyarranged about the first heating element 130 and is configured toelevate the temperature in the peripheral region 142. Furthermore, afirst controllably insulating element 150 is positioned below the firstheating element 130, and is configured to control the transfer of heatin the central region 132 between the substrate 125 and at least onecooling element 170 positioned therebelow. A second controllablyinsulating element 160 is positioned below the second heating element140 and arranged concentrically about the first controllably insulatingelement 150. It is configured to control the transfer of heat in theperipheral region 142 between the substrate 125 and the at least onecooling element 170 positioned therebelow.

In another embodiment, FIG. 7 presents a substrate holder 120′configured for use in any one of the material processing systems 1described in FIGS. 1 through 5. Substrate holder 10 is configured tosupport substrate 125, and control the temperature thereof. Substrateholder 120′ comprises the elements described in FIG. 6; however, itfurther comprises a third heating element 180 positioned in a secondperipheral region 182 that is concentrically arranged about the secondheating element 140 and is configured to elevate the temperature in thesecond peripheral region 182. A third controllably insulating element190 is positioned below the third heating element 180 and arrangedconcentrically about the second controllably insulating element 160. Itis configured to control the transfer of heat in the second peripheralregion 182 between the substrate 125 and the at least one coolingelement 170 positioned therebelow.

In an alternate embodiment, additional (i.e. a fourth, fifth, nth)heating elements and controllably insulating elements, concentricallyarranged can be utilized.

In yet another embodiment, the regions need not be concentrically laidout. Instead, any number of region types can be used (e.g., strips,quarters, spirals, wedges).

Heating elements 130, 140, and 180 can comprise at least one of aheating fluid channel, a resistive heating element, or a thermoelectricelement biased to transfer heat towards the wafer. Furthermore, as shownin FIG. 8, heating elements 130, 140, and 180 are coupled to a heatingelement control unit 200. Heating element control unit 200 is configuredto provide either dependent or independent control of each heatingelement, and exchange information with controller 55. For example, theheating elements can comprise one or more heating channels that canpermit a flow rate of a fluid, such as water, Fluorinert, Galden HT-135,etc., therethrough in order to provide conductive-convective heating,wherein the fluid temperature has been elevated via a heat exchanger.The fluid flow rate and fluid temperature can, for example, be set,monitored, adjusted, and controlled by the heating element control unit200.

Alternatively, for example, the heating elements can comprise one ormore resistive heating elements such as a tungsten, nickel-chromiumalloy, aluminum-iron alloy, aluminum nitride, etc., filament. Examplesof commercially available materials to fabricate resistive heatingelements include Kanthal, Nikrothal, Akrothal, which are registeredtrademark names for metal alloys produced by Kanthal Corporation ofBethel, Conn. The Kanthal family includes ferritic alloys (FeCrAl) andthe Nikrothal family includes austenitic alloys (NiCr, NiCrFe). Forexample, the heating elements can comprise a cast-in heater commerciallyavailable from Watlow (1310 Kingsland Dr., Batavia, Ill., 60510) capableof a maximum operating temperature of 400 to 450 C, or a film heatercomprising aluminum nitride materials that is also commerciallyavailable from Watlow and capable of operating temperatures as high as300 C and power densities of up to 23.25 W/cm². Additionally, forexample, the heating element can comprise a silicone rubber heater (1.0mm thick) capable of 1400 W (or power density of 5 W/in²). When anelectrical current flows through the filament, power is dissipated asheat, and, therefore, the heating element control unit 200 can, forexample, comprise a controllable DC power supply. A further heateroption, suitable for lower temperatures and power densities, are Kaptonheaters, consisted of a filament embedded in a Kapton (e.g. polyimide)sheet, marketed by Minco, Inc., of Minneapolis, Minn.

Alternately, for example, the heating elements can comprise an array ofthermoelectric elements capable of heating or cooling a substratedepending upon the direction of electrical current flow through therespective elements. An exemplary thermoelectric element is onecommercially available from Advanced Thermoelectric, ModelST-127-1.4-8.5M (a 40 mm by 40 mm by 3.4 mm thermoelectric devicecapable of a maximum heat transfer power of 72 W). Therefore, theheating element control unit 200 can, for example, comprise acontrollable current source.

The at least one cooling element 170 can comprise at least one of acooling channel, or a thermoelectric element. Furthermore, as shown inFIG. 8, the at least one cooling element 170 is coupled to a coolingelement control unit 202. Cooling element control unit 202 is configuredto provide either dependent or independent control of the at least onecooling element 170, and exchange information with controller 55. Forexample, the at least one cooling element can comprise one or morecooling channels that can permit a flow rate of a fluid, such as water,Fluorinert, Galden HT-135, etc., therethrough in order to provideconductive-convective cooling, wherein the fluid temperature has beenlowered via a heat exchanger. The fluid flow rate and fluid temperaturecan, for example, be set, monitored, adjusted, and controlled by thecooling element control unit 202. Alternately, during heating forexample, the one or more cooling channels can be drained and evacuatedin order to serve as further insulation between the heating elements(described above) and the process tool 10 (as shown in FIG. 1).

Alternately, for example, the at least one cooling element can comprisean array of thermoelectric elements capable of heating or cooling asubstrate depending upon the direction of electrical current flowthrough the respective elements. An exemplary thermo-electric element isone commercially available from Advanced Thermoelectric, ModelST-127-1.4-8.5M (a 40 mm by 40 mm by 3.4 mm thermoelectric devicecapable of a maximum heat transfer power of 72 W). Therefore, thecooling element control unit 202 can, for example, comprise acontrollable current source.

The controllably insulating elements 150, 160, and 190 can comprise agas gap within which gas properties can be varied in order to vary theheat conductance across the gas gap. Furthermore, as shown in FIG. 8,the controllably insulating elements 150, 160, and 190 are coupled to aninsulating element control unit 208. Insulating element control unit 208is configured to provide either dependent or independent control of eachcontrollably insulating element, and exchange information withcontroller 55.

For example, as shown in FIG. 8, the insulating element control unit 208can comprise a first system for affecting the heat conductance throughthe first controllably insulating element 150 comprising a first gassupply unit 210A and a first vacuum pump 212A coupled to the firstcontrollably insulating element 150 via first gas line 218A through gasflow control devices 214A and 216A, respectively. Similarly, as shown inFIG. 8, the insulating element control unit 208 can further comprise asecond system for affecting the heat conductance through the secondcontrollably insulating element 160 comprising a second gas supply unit210B and a second vacuum pump 212B coupled to the second controllablyinsulating element 160 via second gas line 218B through gas flow controldevices 214B and 216B, respectively. Gas supply units 210A, 210B can,for example, supply a heat transfer gas such as helium. Alternately, thefirst controllably insulating element 150 and the second controllablyinsulating element 160 are coupled to the same gas supply unit andvacuum pump. Alternately, the first and second controllably insulatingelements 150, 160 can be evacuated through a vacuum line as part ofvacuum pumping system 58 as shown in FIGS. 2 through 5.

The thermal conductance of each controllably insulating element can beaffected by the physical dimensions of the insulating element (i.e.thickness of the gap), the type of gas present within the insulatingelement, and the pressure of the gas within the insulating element, aswell as other parameters. For example, Table 1 illustrates theapproximate dependence of the heat conductance (or heat transfercoefficient) across a gas gap as a function of the gap thickness δ andthe gas pressure p for helium. TABLE 1 p = 1 h (W/m²K) Torr p = 10 Torrp = 100 Torr p = 1000 Torr δ = 0.005 mm 90 1000 7500 30000 0.05 mm 90750 2500 3500 0.5 mm 70 250 400 400 5 mm 15 35 40 40

From inspection of Table 1, the smaller the gap thickness, the greaterthe variation in heat conductance for a gas pressure from 1 to 1000Torr. For example, a 50 micron gap (0.05 mm) can provide a relativelyhigh heat conductance when pressurized to approximately one atmosphere(1000 Torr), and a relatively low heat conductance when evacuated toapproximately a thousandth of an atmosphere (1 Torr).

Additionally, as shown in FIG. 9, the substrate holder 120, 120′ canfurther comprise an electrostatic clamp (ESC) 230 comprising a ceramiclayer 234, one or more clamping electrodes 232 embedded therein, and ahigh-voltage (HV) DC voltage supply 236 coupled to the clampingelectrodes 232 via an electrical connection 238. The design andimplementation of such a clamp is well known to those skilled in the artof electrostatic clamping systems. Furthermore, the HV DC voltage supply236 is coupled to controller 55 and is configured to exchangeinformation with controller 55.

Referring still to FIG. 9, the substrate holder 120, 120′ can furthercomprise a back-side gas supply system 250 for supplying a heat transfergas, such as an inert gas including helium, argon, xenon, krypton, aprocess gas, or other gas including oxygen, nitrogen, or hydrogen, tothe backside of substrate 125 through at least one gas supply line 252A,B, C, and at least one of a plurality of orifices and channels (notshown). The backside gas supply system 250 can, for example, be amulti-zone supply system such as a two-zone (center—252A, edge—252C)system, or a three-zone (center—252A, mid-radius—252B, edge—252C),wherein the backside pressure can be varied radially from the center toedge.

In another embodiment, as shown in FIG. 10, the temperature of substrate125 can be monitored with a monitoring system 260 at one or morelocations using one or more temperature-sensing devices 262A, 262B,262C, such as an optical fiber thermometer commercially available fromAdvanced Energies, Inc. (1625 Sharp Point Drive, Fort Collins, Colo.,80525), Model No. OR2000F capable of measurements from 50 to 2000 C andan accuracy of plus or minus 1.5 C, a band-edge temperature measurementsystem as described in pending U.S. patent application Ser. No.10/168,544, filed on Jul. 2, 2002, the contents of which areincorporated herein by reference in their entirety, or a thermocouple(as indicated by the dashed line) such as a K-type thermocouple. Themonitoring system 260 can provide sensor information to controller 55 inorder to adjust at least one of a heating element, a cooling element, acontrollably insulating element, a backside gas supply system, and an HVDC voltage supply for an ESC either before, during, or after processing.

Furthermore, for example, substrate 25, 125 can be transferred into andout of process tool 10 through a slot valve (not shown) and chamberfeed-through (not shown) via robotic substrate transfer system where itis received by substrate lift pins (not shown) housed within substrateholder 20, 120, 120′ and mechanically translated by devices housedtherein. Once substrate 25, 125 is received from substrate transfersystem, it is lowered to an upper surface of substrate holder 20, 120,120′.

Controller 55 includes a microprocessor, memory, and a digital I/O port(potentially including D/A and/or A/D converters) capable of generatingcontrol voltages sufficient to communicate and activate inputs tomaterial processing system 1 as well as monitor outputs from materialprocessing system 1. As shown in FIGS. 8 and 9, controller 55 can becoupled to and exchange information with heating element control unit200, cooling element control unit 202, insulating element control unit208, HV DC voltage supply 236, and backside gas supply system 250. Aprogram stored in the memory is utilized to interact with theaforementioned components of a material processing system 1 according toa stored process recipe. One example of controller 55 is a DELLPRECISION WORKSTATION 640™, available from Dell Corporation, Austin,Tex.

FIG. 11 presents a flowchart describing a method 300 of controlling thetemperature of a substrate on a substrate holder in a processing system.For example, the temperature control scheme can pertain to multipleprocess steps for a process in the processing system. The substrateholder comprises one of those described in FIGS. 6 through 10. Themethod 300 begins in 310 with initializing the control parameters forcontrolling the temperature of the substrate. The control parameterscomprise the input parameters for the first heating element, the inputparameters for the second heating element, the input parameters for thefirst controllably insulating element, the input parameters for thesecond controllably insulating element, and the input parameters to theat least one cooling element. The control parameters can furthercomprise the input parameters for the electrostatic clamp HV DC voltagesupply, and the input parameters for the backside gas supply system. Theinput parameters for the first and second heating elements can, forexample, comprise a voltage or current for a resistive heating element,a fluid flow rate or fluid temperature for a heating channel, or acurrent or polarity for a thermoelectric element. The input parametersfor the first and second controllably insulating elements can, forexample, comprise a gas gap gas type or a gas gap gas pressure. Theinput parameters for the at least one cooling element can, for example,comprise a fluid flow rate or a fluid temperature for a cooling channel,or a voltage, current or polarity for a thermo-electric element. Theinput parameters for an ESC can, for example, comprise a clamp voltage.The input parameters for a backside gas supply system can, for example,comprise a backside flow rate, a backside gas pressure, or a backsidegas type.

In 320, the control parameters established in 310 can be set in order toperform at least one of pre-processing the substrate, the substrateholder, or the processing system.

In 330, a process is initiated in the processing system for treating thesubstrate, and, in 340, the control parameters are controlled and/oradjusted. The control parameters can be controlled and/or adjustedaccording to a pre-determined process recipe. Alternately, the controlparameters can be controlled and/or adjusted according to a comparisonof temperature measurements using temperature sensing devices withprocess conditions dictated by a process recipe. Alternately, thecontrol parameters can be controlled and/or adjusted according to acombination of a pre-determined process recipe and a comparison oftemperature measurements using temperature sensing devices with processconditions dictated by a process recipe.

In 350, the process is terminated, and, thereafter, the controlparameters can, optionally, be controlled and/or adjusted in order topost-process at least one of the substrate, the substrate holder, or theprocessing system.

In an example, such as one encountered in plasma processing, a processfor treating a substrate can comprise treatment at an elevated substratetemperature. During such a process, the substrate temperature can berapidly elevated to a target temperature and the process can beinitiated. For example, utilizing a substrate holder, such as the onedescribed in FIG. 10, the first and second heating elements can compriseseparate resistive heating elements, each of which is either dependentlyor independently coupled to an electrical current source. Duringpre-processing, an electrical current (equivalent to, for example, 15 kWof power) can be applied to the first and second heating elements tofacilitate heating of the substrate, and the first and second insulatingelements can be evacuated (to, for example, 1 Torr helium gas pressure)to thermally insulate the first and second heating elements from the atleast one cooling element. Thereafter, the process can be initiated byflowing process gases into the processing system and generating aplasma. Upon initiation of the process, electrical current to the firstand second heating elements can be terminated, and the first and secondinsulating elements can be restored to atmospheric pressure to aidcooling of the substrate and balance the plasma heat flux to thesubstrate. The process can be initiated at any time during substratetemperature ramp from its nominal temperature to the target temperature.During processing, any one of the above identified control parameterscan be monitored, adjusted, or controlled.

Although only certain exemplary embodiments of this invention have beendescribed in detail above, those skilled in the art will readilyappreciate that many modifications are possible in the exemplaryembodiments without materially departing from the novel teachings andadvantages of this invention. Accordingly, all such modifications areintended to be included within the scope of this invention.

1. A substrate holder for supporting a substrate in a processing systemand controlling the temperature thereof comprising: a first heatingelement arranged in a first region of said substrate holder andconfigured to raise the temperature in said first region; a secondheating element configured to raise the temperature in said secondregion; a first controllably insulating element positioned below saidfirst heating element in said first region; a second controllablyinsulating element positioned below said second heating element in saidsecond region; and at least one cooling element arranged below saidfirst and second controllably insulating elements, wherein said firstcontrollably insulating element is configured to control the transfer ofheat from said substrate through said first region of said substrateholder to said at least one cooling element, and said secondcontrollably insulating element is configured to control the transfer ofheat between said substrate through said second region of said substrateholder to said at least one cooling element.
 2. The substrate holder asrecited in claim 1 further comprising a first intermediate spacearranged between said first region and said second region, andconfigured to permit the transfer of heat between said substrate andsaid at least one cooling element.
 3. The substrate holder as recited inclaim 1, wherein said second region is located concentrically around thefirst region which is centrally located, said substrate holder furthercomprising: a third heating element concentrically arranged about saidsecond heating element in a third region of said substrate holder andconfigured to raise the temperature in said third region; and a thirdcontrollably insulating element positioned below said third heatingelement in said third region and concentrically arranged about saidsecond controllably insulating element.
 4. The substrate holder asrecited in claim 1, wherein said first and second heating elementscomprise at least one of a resistive heating element, a heating channel,and a thermoelectric element.
 5. The substrate holder as recited inclaim 1, wherein said at least one cooling element comprises at leastone of a cooling channel, and a thermo-electric element.
 6. Thesubstrate holder as recited in claim 1, wherein each of said first andsecond controllably insulating elements comprise a gas gap coupled to atleast one of a vacuum pump and a gas supply unit.
 7. The substrateholder as recited in claim 1 further comprising at least one of anelectrostatic clamp for clamping said substrate to said substrateholder, and a backside gas supply system for increasing the thermalconductance between said substrate and said substrate holder.
 8. Thesubstrate holder as recited in claim 1 further comprising at least onetemperature sensing device.
 9. The substrate holder as recited in claim8, wherein said temperature sensing device comprises at least one of anoptical thermometer, and a thermocouple.
 10. The substrate holder asrecited in claim 1 further comprising a controller coupled to at leastone of said first heating element, said second heating element, saidfirst controllably insulating element, said second controllablyinsulating element, and said at least one cooling element.
 11. Thesubstrate holder as recited in claim 1, wherein the first region is acentral region and a second region is a peripheral region concentricallyarranged about said first region.
 12. The substrate holder as recited inclaim 1, wherein the first and second regions are adjacent.
 13. A methodof controlling the temperature of a substrate using a substrate holderin a processing system comprising: initializing one or more controlparameters for controlling the temperature of said substrate using saidsubstrate holder, said substrate holder comprising a first heatingelement arranged in a first region of said substrate holder, a secondheating element arranged in a second region of said substrate holder, afirst controllably insulating element positioned below said firstheating element in said first region, a second controllably insulatingelement positioned below said second heating element in said secondregion, and at least one cooling element arranged below said first andsecond controllably insulating elements; initiating a process in saidprocessing system; adjusting said one or more control parameters; andterminating said process.
 14. The method as recited in claim 13 furthercomprising a first intermediate space arranged between said first regionand said second region, and configured to permit the transfer of heatbetween said substrate and said at least one cooling element.
 15. Themethod as recited in claim 13, wherein said second region is locatedconcentrically around the first region which is centrally located,further comprising: a third heating element concentrically arrangedabout said second heating element in a third region of said substrateholder; and a third controllably insulating element positioned belowsaid third heating element in said third region and concentricallyarranged about said second controllably insulating element.
 16. Themethod as recited in claim 13, wherein said first and second heatingelements comprise at least one of a resistive heating element, a heatingchannel, and a thermoelectric element.
 17. The method as recited inclaim 13, wherein said at least one cooling element comprises at leastone of a cooling channel, and a thermo-electric element.
 18. The methodas recited in claim 13, wherein each of said first and secondcontrollably insulating elements comprise a gas gap coupled to at leastone of a vacuum pump and a gas supply unit.
 19. The method as recited inclaim 13 further comprising at least one temperature sensing device. 20.The method as recited in claim 19, wherein said temperature sensingdevice comprises at least one of an optical thermometer, and athermocouple.
 21. The method as recited in claim 13 further comprising acontroller coupled to at least one of said first heating element, saidsecond heating element, said first controllably insulating element, saidsecond controllably insulating element, and said at least one coolingelement.
 22. The method as recited in claim 21, wherein said controllerfacilitates at least one of setting, monitoring, adjusting, andcontrolling said one or more control parameters.
 23. The method asrecited in claim 13, wherein said one or more control parameterscomprise at least one of a resistive heating element voltage, aresistive heating element current, a heating channel fluid flow rate, aheating channel fluid temperature, a thermoelectric element current, athermoelectric element polarity, a gas gap gas type, a gas gap gaspressure, a cooling channel fluid flow rate, and a cooling channel fluidtemperature.
 24. The method as recited in claim 13 further comprising atleast one of an electrostatic clamp for clamping said substrate to saidsubstrate holder, and a backside gas supply system for increasing thethermal conductance between said substrate and said substrate holder.25. The method as recited in claim 24, wherein said one or more controlparameters comprise at least one of an electrostatic clamp voltage, abackside gas type, and a backside gas pressure.
 26. The method asrecited in claim 24, wherein said backside gas supply system is at leastone of a two-zone backside gas supply system, and a three-zone backsidegas supply system.
 27. The method as recited in claim 13 furthercomprising: initiating a pre-process in said processing system followingsaid initializing said one or more control parameters.
 28. The method asrecited in claim 27 further comprising: adjusting said one or morecontrol parameters during said pre-process.
 29. The method as recited inclaim 27 further comprising: adjusting said one or more controlparameters following said pre-process, and preceding said process. 30.The method as recited in claim 13 further comprising: initiating apost-process in said processing system following said terminating saidprocess.
 31. The method as recited in claim 30 further comprising:adjusting said one or more control parameters during said post-process.32. The method as recited in claim 30 further comprising: adjusting saidone or more control parameters preceding said post-process, andfollowing said process.
 33. The method as recited in claim 13, whereinthe first region is a central region and a second region is a peripheralregion concentrically arranged about said first region.
 34. The methodas recited in claim 13, wherein the first and second regions areadjacent.